Datasheet > CHA3092RBF/24

CHA3092RBF/24

更新时间： 2022-11-26 05:51:55

品牌	Logo	应用领域
UMS		放大器功率放大器
页数	文件大小	规格书
8页	190K
描述
20-33GHz Medium Power Amplifier

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CHA3092RBF/24 数据手册

CHA3092RBF

20-33GHz Medium Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

Main Features

The monolithic microwave IC (MMIC) in the

package is a high gain broadband four-

stage monolithic medium power amplifier. It

is designed for a wide range of applications,

from military to commercial communication

systems. The circuit is manufactured with a

standard PM-HEMT process: 0.25µm gate

length, via holes through the substrate, air

bridges and electron beam gate lithography.

■ Broad band performance: 20-33GHz

■ Gain = 20dB (typical)

■ Output power (P_-1dB): 19dBm (typical)

■ Return loss < -6dB

■ Low DC power consumption, 300mA

■ SMD leadless package

■ Dimensions: 5.08 x 5.08 x 0.97 mm³

It is supplied in a new SMD leadless chip

carrier.

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors.

It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on

the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN

Ref. : DSCHA3092RBF2057 -26-Feb.-01-

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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