Datasheet > CHA3396-QDG

CHA3396-QDG

更新时间： 2024-09-26 01:20:39

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
16页	523K
描述
27-33.5GHz Medium Power Amplifier

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CHA3396-QDG 数据手册

CHA3396-QDG

27-33.5GHz Medium PowerAmplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA3396-QDG is a 3 stage monolithic

medium power amplifier, which produces

22dB gain for 19dBm output power.

It is designed for

wide range of

applications, from military to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

UMS

A3396

YYWW

It is supplied in RoHS compliant SMD

package.

Output Power & PAE versus Frequency

Main Features

■ Broadband performances: 27-33.5GHz

■ 19dBm Pout at 1dB compression

■ 22dB gain

■ 30dBm OTOI

■ DC bias: Vd= 4.0V, Id= 155mA

■ 24L-QFN4x4 (QDG)

■ MSL1

Psat

P-1dB

PAE sat

Frequency(GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

33.5

Unit

GHz

Frequency range

Linear Gain

27.0

Gain

P-1dB

OTOI

Output Power @1dB comp.

3^rdorder Intercept point

dBm

Ref. : DSCHA3396-QDG5260 -17 Sep 15

1/16

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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