Datasheet > CHA3024-99F_15

CHA3024-99F_15

更新时间： 2024-09-24 01:20:39

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
12页	347K
描述
2-22GHz LNA with AGC

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CHA3024-99F_15 数据手册

CHA3024-99F

2-22GHz LNA with AGC

GaAs Monolithic Microwave IC

Description

The CHA3024-99F is a distributed Low Noise

Amplifier with Adjustable Gain Control (AGC)

which operates between 2 and 22GHz.

It is designed for

wide range of

applications, such as electronic warfare, X

and Ku Point to Point Radio, and test

instrumentation.

Vg2

OUT

The circuit is manufactured using a 0.15µm

gate length pHEMT process, with via holes

through the substrate, air bridges and optical

gate lithography.

Vg1

The part is supplied as bare die and input

and output RF accesses are matched to 50

ohms.

Main Features

■ Broadband performances: 2-22GHz

■ Typical Linear Gain: 15dB

■ Up to 30 dB adjustable gain with Vg2

■ P1dB: 18dBm

Linear Gain, Noise Figure, Return Losses (dB)

■ Psat: 20dBm

■ OIP3: 30dBm

■ Typical Noise Figure: 3dB

■ DC bias: Vd=5V@Id=100mA, Vg1=-0.3V

and Vg2=1.7V.

S11(dB)

S22(dB)

S21(dB)

NF(dB)

-5

-10

-15

-20

-25

-30

■ Chip dimensions: 3.04 x 1.73 x 0.1mm

10 12 14 16 18 20 22 24

Frequency(GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Gain

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

Noise Figure

Pout

Output Power @1dB comp.

dBm

Ref. : DSCHA30244242 - 29 Aug 14

1/12

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...12

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