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CFY25-17 PDF预览

CFY25-17

更新时间: 2024-02-04 20:56:52
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器
页数 文件大小 规格书
6页 162K
描述
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

CFY25-17 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DISK BUTTON, O-CRDB-F4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.67
配置:SINGLE最小漏源击穿电压:5 V
最大漏极电流 (Abs) (ID):0.08 A最大漏极电流 (ID):0.08 A
FET 技术:JUNCTION最高频带:X BAND
JESD-30 代码:O-CRDB-F4JESD-609代码:e0
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:N-CHANNEL
功耗环境最大值:0.25 W最小功率增益 (Gp):9.5 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:RADIAL
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

CFY25-17 数据手册

 浏览型号CFY25-17的Datasheet PDF文件第2页浏览型号CFY25-17的Datasheet PDF文件第3页浏览型号CFY25-17的Datasheet PDF文件第4页浏览型号CFY25-17的Datasheet PDF文件第5页浏览型号CFY25-17的Datasheet PDF文件第6页 
GaAs FET  
CFY 25  
Low noise  
High gain  
For front-end amplifiers  
lon-implanted planar structure  
All gold metallization  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Micro-X  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
4
CFY 25-17  
CFY 25-20  
CFY 25-23  
C 5  
C 6  
C 7  
Q62703-F106  
Q62703-F107  
Q62703-F108  
D
S
G
S
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain-source voltage  
Drain-gate voltage  
V
DS  
DG  
GS  
5
V
V
V
7
Gate-source voltage  
Drain current  
– 5 … + 0  
80  
ID  
mA  
mW  
˚C  
Total power dissipation, TS 56 ˚C2)  
Channel temperature  
Storage temperature range  
P
tot  
250  
T
ch  
150  
Tstg  
– 65 … + 150  
Thermal Resistance  
Channel - soldering point2)  
Rth chS  
375  
K/W  
1)  
For detailed information see chapter Package Outlines.  
TS is measured on the source lead at the soldering point to the pcb.  
2)  
07.94  
Semiconductor Group  
1

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