是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DISK BUTTON, O-CRDB-F4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.67 |
配置: | SINGLE | 最小漏源击穿电压: | 5 V |
最大漏极电流 (Abs) (ID): | 0.08 A | 最大漏极电流 (ID): | 0.08 A |
FET 技术: | JUNCTION | 最高频带: | X BAND |
JESD-30 代码: | O-CRDB-F4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.25 W | 最小功率增益 (Gp): | 9.5 dB |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CFY25-20 | INFINEON |
获取价格 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All | |
CFY25-20H | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-20P | INFINEON |
获取价格 |
HiRel X-Band GaAs Low Noise / General Purpose MESFET | |
CFY25-20P(SAM) | INFINEON |
获取价格 |
暂无描述 | |
CFY25-20PES | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-20S | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-23 | INFINEON |
获取价格 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All | |
CFY25-23ES | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-23H | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
CFY25-23P | INFINEON |
获取价格 |
HiRel X-Band GaAs Low Noise / General Purpose MESFET |