5秒后页面跳转
CET3906E PDF预览

CET3906E

更新时间: 2024-11-01 06:47:23
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 184K
描述
COMPLEMENTARY PICOminiTM SILICON TRANSISTORS

CET3906E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:TLP, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.26
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

CET3906E 数据手册

 浏览型号CET3906E的Datasheet PDF文件第2页 
TM  
CET3904E NPN  
CET3906E PNP  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
DESCRIPTION:  
The Central Semiconductor CET3904E / CET3906E  
Low NPN and PNP Transistors,  
TM  
COMPLEMENTARY PICOmini  
SILICON TRANSISTORS  
V
CE(SAT)  
respectively, are designed for applications where ultra  
small size and power dissipation are the prime  
requirements. Packaged in a Tiny Leadless Package  
TLP™, these components provide performance  
characteristics suitable for the most demanding size  
constrained applications.  
Top View  
Bottom View  
SOT-883L CASE  
MARKING CODES: CET3904E: C  
CET3906E: D  
FEATURES:  
• Device is Halogen Free by design  
• Power Dissipation 250mW  
APPLICATIONS:  
• Low V  
0.1V Typ @ 50mA  
• DC / DC Converters  
CE(SAT)  
• Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including  
Low Profile, Surface Mount Package  
Cell Phones and Digital Cameras  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
UNITS  
V
V
A
V
V
V
60  
40  
CBO  
CEO  
EBO  
6.0  
200  
V
I
mA  
mW  
mW  
°C  
C
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Operating and Storage Junction Temperature  
Thermal Resistance (Note 1)  
Thermal Resistance (Note 2)  
P
P
250  
430  
-65 to +150  
500  
D
D
stg  
T , T  
J
Θ
°C/W  
°C/W  
JA  
JA  
Θ
290  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
NPN  
TYP  
PNP  
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX UNITS  
I
V
=30V, V =3.0V  
50  
nA  
V
V
V
V
CEV  
CE EB  
BV  
BV  
BV  
V
I =10μA  
60  
40  
6.0  
115  
60  
7.5  
90  
55  
7.9  
CBO  
CEO  
EBO  
C
I =1.0mA  
C
I =10μA  
E
I =10mA, I =1.0mA  
0.057  
0.050  
0.100  
CE(SAT)  
C
B
Enhanced specification  
Notes: (1) FR-4 epoxy PC board, standard mounting conditions  
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm  
2
R1 (5-MAY 2008)  

与CET3906E相关器件

型号 品牌 获取价格 描述 数据表
CET3906EBK CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.4
CET3906EBKLEADFREE CENTRAL

获取价格

Transistor
CET3906EBKPBFREE CENTRAL

获取价格

暂无描述
CET3906ETIN/LEAD CENTRAL

获取价格

Small Signal Bipolar Transistor,
CET3906ETR CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.4
CET4301 CET

获取价格

P-Channel Enhancement Mode Field Effect Transistor
CET4401B CET

获取价格

P-Channel Enhancement Mode Field Effect Transistor
CET4435A CET

获取价格

P-Channel Enhancement Mode Field Effect Transistor
CET451AN CET

获取价格

N-Channel Enhancement Mode Field Effect Transistor
CET453N CET

获取价格

N-Channel Enhancement Mode Field Effect Transistor