Datasheet > CET3906ETR

CET3906ETR

更新时间： 2024-11-02 07:16:23

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	364K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.40 MM, LEADLESS, TLP, 3 PIN

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数据手册

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CET3906ETR 数据手册

CET3904E NPN

CET3906E PNP

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CET3904E /

CET3906E Low V NPN and PNP Transistors,

COMPLEMENTARY

SILICON TRANSISTORS

CE(SAT)

respectively, are designed for applications where

ultra small size and power dissipation are the prime

requirements. Packaged in a Tiny Leadless Package

TLP™, these components provide performance

characteristics suitable for the most demanding size

constrained applications.

MARKING CODES: CET3904E: C

CET3906E: D

SOT-883L CASE

FEATURES:

APPLICATIONS:

• Device is Halogen Free by design

• DC / DC Converters

• 250mW Power Dissipation

• Battery powered devices including Cell Phones

and Digital Cameras

• Low V

0.1V Typ @ 50mA

CE(SAT)

• Small,TLP™1x0.4mm,SOT-883L Leadless

Low Profile, Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

♦

CBO

Collector-Emitter Voltage

CEO

Emitter-Base Voltage

6.0

EBO

Continuous Collector Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

Thermal Resistance (Note 2)

200

°C

250

430

T , T

-65 to +150

500

stg

°C/W

290

ELECTRICAL CHARACTERISTICS:

NPN

TYP

PNP

TYP

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

MIN

MAX

UNITS

CEV

I =10µA

115

♦

CBO

CEO

I =1.0mA

I =10µA

6.0

7.5

7.9

EBO

♦ ^V

I =10mA, I =1.0mA

0.057

0.100

0.75

0.85

0.050

0.100

0.75

0.85

0.100

0.200

0.85

CE(SAT)

)

I =50mA, I =5.0mA

♦

CE(SAT

I =10mA, I =1.0mA

0.65

BE(SAT)

I =50mA, I =5.0mA

0.95

Enhanced specification

♦

Notes: (1) FR-4 epoxy PC board, standard mounting conditions

(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm²

R2 (4-January 2010)

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