Datasheet > CET4435A

CET4435A

更新时间： 2024-11-01 09:23:35

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CET4435A 数据手册

CET4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -8.8A, R_DS(ON)= 24mΩ @V_GS= -10V.

R_DS(ON)= 35mΩ @V_GS= -4.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-223 package.

SOT-223

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-8.8

-35

I_DM

Maximum Power Dissipation

P_D

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

C/W

Rev 1. 2006.January

http://www.cetsemi.com

Specification and data are subject to change without notice .

7 - 42

12 3 4

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