Datasheet > CET4401B

CET4401B

更新时间： 2024-11-01 12:50:03

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	387K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CET4401B 数据手册

CET4401B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-40V, -4.9A, R_DS(ON)= 57mΩ @V_GS= -10V.

R_DS(ON)= 85mΩ @V_GS= -4.5V.

High dense cell design for extremely low R_DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-223 package.

SOT-223

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-40

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-4.9

-20

I_DM

Maximum Power Dissipation

P_D

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

C/W

Rev 1. 2006.January

http://www.cetsemi.com

Specification and data are subject to change without notice .

12 3 4

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