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CET3906EBK PDF预览

CET3906EBK

更新时间: 2024-11-01 13:06:47
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 184K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.40 MM, LEADLESS, TLP, 3 PIN

CET3906EBK 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CHIP CARRIER, R-PBCC-N3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.29
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.43 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

CET3906EBK 数据手册

 浏览型号CET3906EBK的Datasheet PDF文件第2页 
TM  
CET3904E NPN  
CET3906E PNP  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
DESCRIPTION:  
The Central Semiconductor CET3904E / CET3906E  
Low NPN and PNP Transistors,  
TM  
COMPLEMENTARY PICOmini  
SILICON TRANSISTORS  
V
CE(SAT)  
respectively, are designed for applications where ultra  
small size and power dissipation are the prime  
requirements. Packaged in a Tiny Leadless Package  
TLP™, these components provide performance  
characteristics suitable for the most demanding size  
constrained applications.  
Top View  
Bottom View  
SOT-883L CASE  
MARKING CODES: CET3904E: C  
CET3906E: D  
FEATURES:  
• Device is Halogen Free by design  
• Power Dissipation 250mW  
APPLICATIONS:  
• Low V  
0.1V Typ @ 50mA  
• DC / DC Converters  
CE(SAT)  
• Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including  
Low Profile, Surface Mount Package  
Cell Phones and Digital Cameras  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
UNITS  
V
V
A
V
V
V
60  
40  
CBO  
CEO  
EBO  
6.0  
200  
V
I
mA  
mW  
mW  
°C  
C
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Operating and Storage Junction Temperature  
Thermal Resistance (Note 1)  
Thermal Resistance (Note 2)  
P
P
250  
430  
-65 to +150  
500  
D
D
stg  
T , T  
J
Θ
°C/W  
°C/W  
JA  
JA  
Θ
290  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
NPN  
TYP  
PNP  
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX UNITS  
I
V
=30V, V =3.0V  
50  
nA  
V
V
V
V
CEV  
CE EB  
BV  
BV  
BV  
V
I =10μA  
60  
40  
6.0  
115  
60  
7.5  
90  
55  
7.9  
CBO  
CEO  
EBO  
C
I =1.0mA  
C
I =10μA  
E
I =10mA, I =1.0mA  
0.057  
0.050  
0.100  
CE(SAT)  
C
B
Enhanced specification  
Notes: (1) FR-4 epoxy PC board, standard mounting conditions  
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm  
2
R1 (5-MAY 2008)  

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