SMD Schottky Barrier Rectifiers
CDBA520-G Thru. CDBA5200-G
Reverse Voltage: 20 to 200 Volts
Forward Current: 5.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
0.067 (1.70)
0.047 (1.20)
0.114 (2.90)
0.083 (2.10)
0.181 (4.60)
0.157 (4.00)
-Silicon epitaxial planar chip,metal silicon junction.
0.012 (0.30)
TYP.
Mechanical data
0.098 (2.50)
0.067 (1.70)
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA
0.008(0.20)
0.004(0.10)
0.209 (5.30)
0.185 (4.70)
0.061 (1.55)
0.030 (0.75)
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.055 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
CDBA
520-G
CDBA
540-G
CDBA
560-G
CDBA
CDBA
CDBA
Parameter
Symbol
Units
5100-G
5150-G
5200-G
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
VRRM
VDC
VRMS
VF
20
20
40
40
60
60
100
100
70
150
150
105
0.87
200
200
140
0.90
V
V
14
28
42
V
Max. instantaneous forward voltage @
5.0A, TA=25°C
0.50
0.55
0.75
0.81
V
Operating Temperature
TJ
-50 to +150
-50 to +175
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Units
see Fig.1
Forward rectified current
Forward surge current
5.0
A
A
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
125
VR =VRRM TA=25°C
VR =VRRM TA=100°C
IR
IR
0.5
20
mA
mA
Reverse Current
Thermal Resistance
Junction to ambient
RθJA
CJ
24
°C/W
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
Storage temperature
380
pF
°C
TSTG
-50
+175
REV: B
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Comchip Technology CO., LTD.