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CDBAL260-G PDF预览

CDBAL260-G

更新时间: 2024-11-05 20:45:59
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 77K
描述
Rectifier Diode, Schottky, 1 Element, 2A, 60V V(RRM),

CDBAL260-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 V最大非重复峰值正向电流:50 A
元件数量:1最高工作温度:175 °C
最大输出电流:2 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CDBAL260-G 数据手册

 浏览型号CDBAL260-G的Datasheet PDF文件第2页浏览型号CDBAL260-G的Datasheet PDF文件第3页浏览型号CDBAL260-G的Datasheet PDF文件第4页 
Surface Mount Schottky Barrier Rectifier  
CDBAL220-G thru 2100-G  
Reverse Voltage Range: 20 to 100 V  
Forward Current: 2.0A  
Package outline  
"-G" : RoHS Device  
Features  
Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
SMA  
0.189(4.8)  
0.165(4.2)  
Low profile surface mounted application in order to  
optimize board space.  
0.012(0.3) Typ.  
Low power loss, high efficiency.  
High current capability, low forward voltage drop.  
High surge capability.  
0.106(2.7)  
0.091(2.3)  
Guardring for overvoltage protection.  
Ultra high-speed switching.  
Silicon epitaxial planar chip, metal silicon junction.  
0.156(3.9)  
0.140(3.5)  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
0.071(1.8)  
0.055(1.4)  
Mechanical data  
Epoxy:UL94-V0 rated flameretardant  
0.040(1.0) Typ.  
0.040 (1.0) Typ.  
Case : Molded plastic, DO-214AC / SMA  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
Polarity : Indicatedby cathode band  
Mounting Position :Any  
Weight : Approximated 0.05gram  
Maximum ratings(AT TA=25oC unless otherwise noted)  
MAX.  
2.0  
Symbol  
IO  
TYP.  
UNIT  
A
MIN.  
PARAMETER  
CONDITIONS  
Forward rectified current  
See Fig.1  
8.3ms single halfsine-wave superimposed on  
rate load (JEDECmethode)  
IFSM  
50  
Forward surge current  
A
VR = VRRM TA = 25OC  
0.5  
10  
IR  
Reverse current  
mA  
VR = VRRM TA = 125 OC  
Junction to ambient  
R
55  
30  
OC/W  
OC/W  
pF  
èJA  
Thermal resistance  
Junction to case  
R
èJC  
Diode junction capacitance  
Storage temperature  
160  
f=1MHz and applied4V DC reversevoltage  
CJ  
OC  
TSTG  
-65  
+175  
Operating  
temperature  
TJ, (OC)  
*1  
*3  
VR  
(V)  
*4  
VF  
(V)  
*2  
VRMS  
SYMBOLS  
VRRM  
(V)  
(V)  
20  
30  
40  
50  
14  
21  
28  
35  
42  
56  
70  
CDBAL220-G  
20  
30  
40  
50  
60  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
CDBAL230-G  
CDBAL240-G  
0.50  
-55 to +125  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
CDBAL250-G  
0.70  
0.85  
60  
CDBAL260-G  
CDBAL280-G  
CDBAL2100-G  
80  
80  
100  
100  
Page 1  
MDS0906018A  

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