Datasheet > CDBAS340-HF

CDBAS340-HF

更新时间： 2024-11-06 01:24:43

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	103K
描述
SMD Schottky Barrier Rectifiers

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中文翻译

获取价格

技术参数
数据手册

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CDBAS340-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.73
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CDBAS340-HF 数据手册

SMD Schottky Barrier Rectifiers

Comchip

S M D D i o d e S p e c i a l i s t

CDBAS340-HF

Reverse Voltage: 40 Volts

Forward Current: 3.0 Amp

RoHS Device

Halogen Free

SMA-S

Features

0.191(4.85)

0.173(4.40)

- High surge and current capability

0.045(1.15)

Typ.

- For use in low voltage, high frequency invertors

free wheeling and polarity protection

0.057(1.45)

0.051(1.30)

0.108(2.75)

0.096(2.45)

- Built-in strain relief

- Silicon epitaxial planar chips

- Metal silicon junction with guard ring

0.153(3.90)

0.132(3.35)

Mechanical data

0.043(1.10)

Max.

- Epoxy: UL94-V0 rate flame retardant

- Case: Molded plastic, SMA-S

0.043(1.10)

Typ.

- Terminals: Solder plated solderable per

MIL-STD-750 method 2026

Dimensions in inches and (millimeter)

- Polarity: Color band denotes cathode end

- Mounting position: Any

Circuit diagram

- Weight: 0.045 grams(approx.)

Maximum Ratings and Electrical Characteristics(at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Maximum recurrent peak reverse voltage

Maximum DC blocking voltage

VRRM

VDC

VRMS

Maximum RMS voltage

Maximum forward voltage at 3.0A (note1)

0.50

Maximum average forward current

IF(AV)

IFSM

3.0

0.2 x0.2”(5.0x5.0mm) copper pad area, see Figure 1

Peak forward surge current

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

TA=25°C

0.1

Maximum DC reverse current

at rated DC blocking voltage

TA=100°C

Typical junction capacitance (note2)

RθJL

RθJA

250

Junction to lead

Typical thermal resistance (note3)

Junction to Ambient

°C/W

°C

Operating junction temperature range

-55 to +125

-55 to +150

Storage temperature range

TSTG

°C

Notes: 1. Pulse test: 300µS pulse width,1% duty cycle

2. Measured at 1.0MHz and applied reverse voltage of 4.0 volts

3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2x0.2”(5.0x5.0mm) copper pad areas.

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-JB062

Comchip Technology CO., LTD.

12 3 4

中文翻译

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