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CDBB1200LR-HF PDF预览

CDBB1200LR-HF

更新时间: 2024-11-09 07:19:59
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管光电二极管瞄准线
页数 文件大小 规格书
4页 92K
描述
Low VF Low IR SMD Schottky Barrier Rectifiers

CDBB1200LR-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMB, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74Is Samacsys:N
其他特性:LOW POWER LOSS配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CDBB1200LR-HF 数据手册

 浏览型号CDBB1200LR-HF的Datasheet PDF文件第2页浏览型号CDBB1200LR-HF的Datasheet PDF文件第3页浏览型号CDBB1200LR-HF的Datasheet PDF文件第4页 
Low VF Low IR SMD Schottky Barrier Rectifiers  
CDBB120LR-HF Thru. CDBB1200LR-HF  
Reverse Voltage: 20 to 200 Volts  
Forward Current: 1.0 Amp  
RoHS Device  
Halogen Free  
Features  
DO-214AA (SMB)  
-Low Profile surface mount applications  
in order to optimize board space.  
-Low power loss, high efficiency.  
-Hight current capability, low forward voltage drop.  
-Hight surge capability.  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip,metal silicon junction.  
0.087 (2.20)  
0.075 (1.90)  
0.157 (4.00)  
0.130 (3.30)  
0.189 (4.80)  
0.157 (4.00)  
0.012 (0.31)  
MAX.  
0.098 (2.50)  
0.083 (2.10)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
-Case: Molded plastic, DO-214AA / SMB  
0.008(0.21)  
MAX.  
0.063 (1.60)  
0.028 (0.70)  
0.220 (5.60)  
0.197 (5.00)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
-Polarity: Indicated by cathode band.  
-Weight: 0.091 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
CDBB  
CDBB  
CDBB  
CDBB  
CDBB  
CDBB  
Parameter  
Symbol  
Units  
120LR-HF 140LR-HF 160LR-HF 1100LR-HF 1150LR-HF 1200LR-HF  
Max. Repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
20  
20  
40  
40  
60  
60  
100  
100  
70  
150  
150  
105  
0.82  
200  
200  
140  
0.85  
V
V
14  
28  
42  
V
Max. Instantaneous forward voltage  
@1.0A, TA=25°C  
0.40  
0.45  
0.55  
0.75  
V
Operating Temperature  
TJ  
-50 to +150  
-50 to +175  
°C  
Symbol  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
Forward rectified current  
Forward surge current  
IO  
1.0  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
50  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
88  
°C/W  
Diode Junction capacitance  
Storage temperature  
f=1MHZ and applied 4V DC reverse Voltage  
120  
pF  
°C  
TSTG  
-50  
+175  
REV:A  
Page 1  
QW-JL026  
Comchip Technology CO., LTD.  

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