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CDBB160-HF PDF预览

CDBB160-HF

更新时间: 2024-11-06 07:19:59
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上华 - COMCHIP /
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4页 106K
描述
SMD Schottky Barrier Rectifiers

CDBB160-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.68其他特性:LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDBB160-HF 数据手册

 浏览型号CDBB160-HF的Datasheet PDF文件第2页浏览型号CDBB160-HF的Datasheet PDF文件第3页浏览型号CDBB160-HF的Datasheet PDF文件第4页 
SMD Schottky Barrier Rectifiers  
CDBB120-HF Thru. CDBB1100-HF  
Reverse Voltage: 20 to 100 Volts  
Forward Current: 1.0 Amp  
RoHS Device  
Halogen Free  
DO-214AA (SMB)  
Features  
-Low Profile surface mount applications  
in order to optimize board space.  
0.087 (2.20)  
0.075 (1.90)  
0.157 (4.00)  
0.130 (3.30)  
-Low power loss, high efficiency.  
-Hight current capability, low forward voltage drop.  
-Hight surge capability.  
0.189 (4.80)  
0.157 (4.00)  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
0.012 (0.31)  
MAX.  
-Silicon epitaxial planar chip,metal silicon junction.  
0.098 (2.50)  
0.083 (2.10)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
0.008(0.21)  
MAX.  
0.063 (1.60)  
0.028 (0.70)  
0.220 (5.60)  
0.197 (5.00)  
-Case: Molded plastic, DO-214AA / SMB  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
Dimensions in inches and (millimeter)  
-Polarity: Indicated by cathode band.  
-weight: 0.091 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
CDBB  
CDBB  
CDBB  
CDBB  
Symbol  
Units  
Parameter  
120-HF  
140-HF  
160-HF  
1100-HF  
Max. Repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
20  
20  
40  
40  
60  
60  
100  
100  
70  
V
V
14  
28  
42  
V
Max. instantaneous forward voltage  
@1.0A, TA=25°C  
0.45  
0.50  
0.70  
0.81  
V
Operating Temperature  
TJ  
-50 to +150  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
forward rectified current  
forward surge current  
1.0  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
30  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
88  
°C/W  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
120  
pF  
°C  
TSTG  
-50  
+175  
REV:A  
Page 1  
QW-JB018  
Comchip Technology CO., LTD.  

CDBB160-HF 替代型号

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