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CDBB240SLR-HF PDF预览

CDBB240SLR-HF

更新时间: 2024-09-16 07:19:59
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
4页 93K
描述
Super Low VF Low IR SMD Schottky Barrier Rectifiers

CDBB240SLR-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.4 V
最大非重复峰值正向电流:50 A元件数量:1
最高工作温度:150 °C最大输出电流:2 A
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

CDBB240SLR-HF 数据手册

 浏览型号CDBB240SLR-HF的Datasheet PDF文件第2页浏览型号CDBB240SLR-HF的Datasheet PDF文件第3页浏览型号CDBB240SLR-HF的Datasheet PDF文件第4页 
Super Low VF Low IR SMD Schottky Barrier Rectifiers  
CDBB220SLR-HF Thru. CDBB260SLR-HF  
Reverse Voltage: 20 to 60 Volts  
Forward Current: 2.0 Amp  
RoHS Device  
Halogen Free  
Features  
DO-214AA (SMB)  
-Low Profile surface mount applications  
in order to optimize board space.  
-Low power loss, high efficiency.  
-Hight current capability, low forward voltage drop.  
-Hight surge capability.  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip, metal silicon junction.  
0.087 (2.20)  
0.075 (1.90)  
0.157 (4.00)  
0.130 (3.30)  
0.189 (4.80)  
0.157 (4.00)  
0.012 (0.31)  
MAX.  
0.098 (2.50)  
0.083 (2.10)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
-Case: Molded plastic, DO-214AA / SMB  
0.008(0.21)  
MAX.  
0.063 (1.60)  
0.028 (0.70)  
0.220 (5.60)  
0.197 (5.00)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
-Polarity: Indicated by cathode band.  
Dimensions in inches and (millimeter)  
-Weight: 0.091 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
Symbol  
CDBB220SLR-HF  
CDBB240SLR-HF  
CDBB260SLR-HF  
Units  
Parameter  
Max. Repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
20  
20  
40  
40  
60  
60  
V
V
14  
28  
42  
V
Max. instantaneous forward voltage @  
2.0A, TA=25°C  
0.35  
0.40  
0.50  
V
Operating Temperature  
TJ  
-50 to +150  
°C  
Symbol  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
Forward rectified current  
Forward surge current  
IO  
2.0  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
50  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
50  
30  
°C/W  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
pF  
°C  
TSTG  
-50  
+150  
REV: B  
Page 1  
QW-JL018  
Comchip Technology CO., LTD.  

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