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CBRHDSH1-200 PDF预览

CBRHDSH1-200

更新时间: 2024-11-11 09:16:15
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 601K
描述
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER

CBRHDSH1-200 数据手册

 浏览型号CBRHDSH1-200的Datasheet PDF文件第2页 
CBRHDSH1-200  
SURFACE MOUNT  
HIGH DENSITY  
1 AMP SILICON  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBRHDSH1-200  
is a full wave bridge rectifier in a durable surface mount  
epoxy molded case, designed for high voltage full wave  
rectification applications. The molding compound used in  
this device has UL flammability classification 94V-O.  
SCHOTTKY BRIDGE RECTIFIER  
MARKING CODE: CSH120  
HD DIP CASE  
FEATURES:  
APPLICATIONS:  
Input rectification for LED lighting  
Power over ethernet (PoE) peripherals  
General purpose full wave rectification  
Low forward voltage (0.76V TYP @ 1.0A)  
Low leakage current (0.2ꢀA TYP @ 200V)  
High current rating: 1.0A  
High voltage rating: 200V  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
SYMBOL  
UNITS  
V
A
V
200  
200  
RRM  
V
V
V
R
RMS Reverse Voltage  
V
140  
R(RMS)  
Average Forward Current  
Peak Forward Surge Current  
Power Dissipation  
I
1.0  
A
O
I
20  
A
FSM  
P
1.2  
W
D
Operating Junction Temperature  
Storage Temperature  
T
-50 to +125  
-50 to +150  
85  
°C  
°C  
°C/W  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =200V  
MIN  
TYP  
0.2  
MAX  
50  
UNITS  
μA  
I
R
R
I
V =200V, T =100°C  
20  
mA  
V
R
R
A
BV  
I =100μA  
200  
220  
760  
R
R
V
I =1.0A  
900  
mV  
F
F
R1 (5-January 2012)  

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