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CBRHDSH2-100 PDF预览

CBRHDSH2-100

更新时间: 2024-11-11 06:46:27
品牌 Logo 应用领域
CENTRAL 整流二极管桥式整流二极管测试光电二极管
页数 文件大小 规格书
3页 664K
描述
SURFACE MOUNT SILICON HIGH DENSITY 2.0 AMP DUAL IN LINE SCHOTTKY BRIDGE RECTIFIER

CBRHDSH2-100 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP-4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
Is Samacsys:N最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):0.84 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-50 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:4 µA
反向测试电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CBRHDSH2-100 数据手册

 浏览型号CBRHDSH2-100的Datasheet PDF文件第2页浏览型号CBRHDSH2-100的Datasheet PDF文件第3页 
TM  
CBRHDSH2-100  
Central  
Semiconductor Corp.  
SURFACE MOUNT SILICON  
HIGH DENSITY  
2.0 AMP DUAL IN LINE  
SCHOTTKY BRIDGE RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBRHDSH2-100  
is a full wave bridge rectifier mounted in a durable  
epoxy surface mount case, utilizing glass passivated  
chips.  
MARKING CODE: CSH10  
FEATURES:  
Low Leakage Current (700nA TYP @ V  
High 2.0A Current Rating  
)
RRM  
HD DIP CASE  
Low V Schottky Diodes (840mV MAX @ I =2.0A)  
F
F
• Device is Halogen Free by design  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
100  
100  
V
RRM  
V
R
V
V
RMS Reverse Voltage  
V
70  
R(RMS)  
Average Forward Current, T =75°C  
A
I
2.0  
A
O
Peak Forward Surge Current (8.3ms)  
Operating Junction Temperature Range  
Storage Temperature Range  
I
50  
A
FSM  
T
J
-50 to +125  
-50 to +150  
°C  
°C  
T
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
V =100V  
0.70  
4.0  
µA  
R
R
V
F
I =500mA  
F
610  
700  
770  
mV  
mV  
mV  
pF  
V
F
I =1.0A  
F
V
F
I =2.0A  
F
840  
250  
C
J
V =4.0V, f=1.0MHz  
R
R2 (8-October 2009)  

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