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CBRHDSH1-40LBKLEADFREE PDF预览

CBRHDSH1-40LBKLEADFREE

更新时间: 2024-11-11 19:29:15
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 599K
描述
Bridge Rectifier Diode, Schottky, 1.2A, 40V V(RRM),

CBRHDSH1-40LBKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.78
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):0.38 V最大非重复峰值正向电流:20 A
元件数量:4最高工作温度:125 °C
最大输出电流:1.2 A最大重复峰值反向电压:40 V
子类别:Bridge Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CBRHDSH1-40LBKLEADFREE 数据手册

 浏览型号CBRHDSH1-40LBKLEADFREE的Datasheet PDF文件第2页 
CBRHDSH1-40L  
SURFACE MOUNT  
HIGH DENSITY  
www.centralsemi.com  
DESCRIPTION:  
1 AMP LOW V SILICON  
F
The CENTRAL SEMICONDUCTOR CBRHDSH1-40L  
is a full wave bridge rectifier mounted in a durable  
epoxy surface mount molded case, utilizing glass  
passivated chips.  
SCHOTTKY BRIDGE RECTIFIER  
MARKING CODE: CSH1  
FEATURES:  
Low Leakage Current (20µA TYP @ V  
High 1.0A Current Rating  
)
RRM  
HD DIP CASE  
Low V Schottky Diodes (440mV MAX @ I =1.0A)  
F
F
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
A
Peak Repetitive Reverse Voltage  
V
40  
V
V
RRM  
DC Blocking Voltage  
V
40  
R
RMS Reverse Voltage  
V
28  
V
R(RMS)  
Average Forward Current  
Peak Repetitive Forward Current  
Peak Forward Surge Current  
Power Dissipation  
I
1.2  
1.7  
A
O
I
A
FRM  
I
20  
A
FSM  
P
1.2  
W
°C  
°C  
°C/W  
D
Operating Junction Temperature  
Storage Temperature  
T
-50 to +125  
-50 to +150  
85  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =40V  
TYP  
20  
MAX  
50  
UNITS  
µA  
I
I
R
R
V =40V, T =100°C  
5.0  
20  
mA  
mV  
mV  
pF  
R
R
A
V
V
I =500mA  
360  
390  
150  
380  
440  
F
F
I =1.0A  
F
F
C
V =4.0V, f=1.0MHz  
R
J
R4 (4-January 2010)  

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