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CBRHDSH1-60BK PDF预览

CBRHDSH1-60BK

更新时间: 2024-11-11 20:04:59
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 599K
描述
Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 60V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4

CBRHDSH1-60BK 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71最小击穿电压:60 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):0.44 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
湿度敏感等级:1最大非重复峰值正向电流:20 A
元件数量:4相数:1
端子数量:4最高工作温度:125 °C
最低工作温度:-50 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:1.2 W
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Bridge Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

CBRHDSH1-60BK 数据手册

 浏览型号CBRHDSH1-60BK的Datasheet PDF文件第2页 
CBRHDSH1-60  
SURFACE MOUNT  
HIGH DENSITY  
1 AMP SILICON  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBRHDSH1-60  
is a full wave bridge rectifier mounted in a durable  
epoxy surface mount molded case, utilizing glass  
passivated chips.  
SCHOTTKY BRIDGE RECTIFIER  
MARKING CODE: CSH106  
FEATURES:  
Low Leakage Current (7.0µA TYP @ V  
High 1.0A Current Rating  
)
RRM  
HD DIP CASE  
Low V Schottky Diodes (600mV MAX @I =1.0A)  
F
F
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
A
Peak Repetitive Reverse Voltage  
V
60  
V
V
RRM  
DC Blocking Voltage  
V
60  
R
RMS Reverse Voltage  
V
42  
V
R(RMS)  
Average Forward Current  
Peak Forward Surge Current  
Power Dissipation  
I
1.0  
20  
A
O
I
A
FSM  
P
1.2  
W
D
Operating Junction Temperature  
Storage Temperature  
T
-50 to +125  
-50 to +150  
85  
°C  
°C  
°C/W  
J
T
stg  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =60V  
TYP  
7.0  
MAX  
20  
UNITS  
µA  
I
I
R
R
R
V =60V, T =100°C  
2.0  
10  
mA  
mV  
mV  
pF  
R
A
V
I =500mA  
430  
500  
130  
500  
600  
F
F
F
V
I =1.0A  
F
C
V =4.0V, f=1.0MHz  
R
J
R2 (4-January 2010)  

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