Datasheet > CBR25F-100P

CBR25F-100P

更新时间： 2024-11-08 01:06:55

品牌	Logo	应用领域
CENTRAL		快速恢复二极管
页数	文件大小	规格书
2页	470K
描述
FAST RECOVERY SILICON BRIDGE RECTIFIERS

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中文翻译

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数据手册

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CBR25F-100P 数据手册

CBR25F-010P SERIES

www.centralsemi.com

FAST RECOVERY

SILICON BRIDGE RECTIFIERS

25 AMP, 100 THRU 600 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR25F-010P series

devices are silicon, single phase, full wave bridge rectifiers

designed for fast recovery applications. The molded

epoxy case has a built-in metal baseplate for heat sink

mounting. The device utilizes standard 0.25” FASTON

terminals.

MARKING: FULL PART NUMBER

CASE FP

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

CBR25F

SYMBOL -010P

-020P

-040P

-060P

UNITS

Peak Repetitive Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

RRM

400

280

600

420

RMS Reverse Voltage

R(RMS)

Average Forward Current (T =60°C)

Peak Forward Surge Current

300

FSM

RMS Isolation Voltage (case to lead)

Operating and StorageJunction Temperature

Thermal Resistance

2500

Vac

°C

iso

T , T

-65 to +150

1.5

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

V =Rated V

μA

RRM

I =12.5A

1.3

I =0.5A, I =1.0A, I =0.25A (100V, 200V, 400V)

200

350

I =0.5A, I =1.0A, I =0.25A (600V)

R1 (4-November 2013)

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