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CBR2-D080STR13 PDF预览

CBR2-D080STR13

更新时间: 2024-11-07 14:48:23
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 408K
描述
Bridge Rectifier Diode, 2A, 800V V(RRM),

CBR2-D080STR13 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.86
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:50 A
元件数量:4最高工作温度:150 °C
最大输出电流:2 A最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:YES
Base Number Matches:1

CBR2-D080STR13 数据手册

 浏览型号CBR2-D080STR13的Datasheet PDF文件第2页 
CBR2-D020S SERIES  
www.centralsemi.com  
SURFACE MOUNT  
2 AMP  
SILICON BRIDGE RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBR2-D020S series  
types are silicon full wave bridge rectifiers mounted in a  
durable epoxy surface mount molded case, utilizing glass  
passivated chips.  
MARKING: FULL PART NUMBER  
SMDIP CASE  
MAXIMUM RATINGS:  
CBR2-  
D020S  
CBR2-  
D040S  
CBR2-  
D060S  
CBR2- CBR2-  
D080S D100S  
(T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
A
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
2.0  
50  
800  
800  
560  
1000  
1000  
700  
V
RRM  
V
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =40°C)  
A
I
A
O
Peak Forward Surge Current  
Rating for Fusing (t<8.35ms)  
I
A
FSM  
I2t  
10  
A2s  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
°C  
J
stg  
Typical Thermal Resistance (Note 1)  
Typical Thermal Resistance  
Θ
40  
15  
°C/W  
°C/W  
JA  
Θ
JL  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
V =Rated V  
5.0  
µA  
R
R
R
RRM  
RRM  
I
V =Rated V  
, T =125°C  
0.5  
1.1  
mA  
V
R
A
V
I =2.0A  
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
Notes: (1) Device mounted on PCB with 13mm x 13mm copper pads.  
R0 (15-December 2010)  

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