Datasheet > CBR2-D060SBKLEADFREE

CBR2-D060SBKLEADFREE

更新时间： 2024-09-17 15:29:15

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
2页	408K
描述
Bridge Rectifier Diode, 2A, 600V V(RRM),

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中文翻译

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技术参数
数据手册

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CBR2-D060SBKLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.78
配置：	BRIDGE, 4 ELEMENTS	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	50 A
元件数量：	4	最高工作温度：	150 °C
最大输出电流：	2 A	最大重复峰值反向电压：	600 V
子类别：	Bridge Rectifier Diodes	表面贴装：	YES
Base Number Matches：	1

CBR2-D060SBKLEADFREE 数据手册

浏览型号CBR2-D060SBKLEADFREE的Datasheet PDF文件第2页

CBR2-D020S SERIES

www.centralsemi.com

SURFACE MOUNT

2 AMP

SILICON BRIDGE RECTIFIER

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR2-D020S series

types are silicon full wave bridge rectifiers mounted in a

durable epoxy surface mount molded case, utilizing glass

passivated chips.

MARKING: FULL PART NUMBER

SMDIP CASE

MAXIMUM RATINGS:

CBR2-

D020S

CBR2-

D040S

CBR2-

D060S

CBR2- CBR2-

D080S D100S

(T =25°C unless otherwise noted)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

DC Blocking Voltage

200

140

400

280

600

420

2.0

800

560

1000

700

RRM

RMS Reverse Voltage

R(RMS)

Average Forward Current (T =40°C)

Peak Forward Surge Current

Rating for Fusing (t<8.35ms)

FSM

I²t

A²s

Operating and Storage

Junction Temperature

T , T

-65 to +150

°C

stg

Typical Thermal Resistance (Note 1)

Typical Thermal Resistance

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

V =Rated V

5.0

µA

RRM

V =Rated V

, T =125°C

0.5

1.1

I =2.0A

V =4.0V, f=1.0MHz

Notes: (1) Device mounted on PCB with 13mm x 13mm copper pads.

R0 (15-December 2010)

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