Datasheet > CBR2-D060STR13

CBR2-D060STR13

更新时间： 2024-09-18 07:29:39

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	408K
描述
Bridge Rectifier Diode, 2A, 600V V(RRM),

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数据手册

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CBR2-D060STR13 数据手册

CBR2-D020S SERIES

www.centralsemi.com

SURFACE MOUNT

2 AMP

SILICON BRIDGE RECTIFIER

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR2-D020S series

types are silicon full wave bridge rectifiers mounted in a

durable epoxy surface mount molded case, utilizing glass

passivated chips.

MARKING: FULL PART NUMBER

SMDIP CASE

MAXIMUM RATINGS:

CBR2-

D020S

CBR2-

D040S

CBR2-

D060S

CBR2- CBR2-

D080S D100S

(T =25°C unless otherwise noted)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

DC Blocking Voltage

200

140

400

280

600

420

2.0

800

560

1000

700

RRM

RMS Reverse Voltage

R(RMS)

Average Forward Current (T =40°C)

Peak Forward Surge Current

Rating for Fusing (t<8.35ms)

FSM

I²t

A²s

Operating and Storage

Junction Temperature

T , T

-65 to +150

°C

stg

Typical Thermal Resistance (Note 1)

Typical Thermal Resistance

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

V =Rated V

5.0

µA

RRM

V =Rated V

, T =125°C

0.5

1.1

I =2.0A

V =4.0V, f=1.0MHz

Notes: (1) Device mounted on PCB with 13mm x 13mm copper pads.

R0 (15-December 2010)

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