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CBR1-D020S_10 PDF预览

CBR1-D020S_10

更新时间: 2024-12-01 09:16:15
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 403K
描述
SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER

CBR1-D020S_10 数据手册

 浏览型号CBR1-D020S_10的Datasheet PDF文件第2页 
CBR1-D020S SERIES  
www.centralsemi.com  
SURFACE MOUNT  
1 AMP  
SILICON BRIDGE RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBR1-D020S series  
types are silicon full wave bridge rectifiers mounted in a  
durable epoxy surface mount molded case, utilizing glass  
passivated chips.  
NOTE: Also available in Fast Recovery, please  
contact factory for details.  
MARKING: FULL PART NUMBER  
SMDIP CASE  
MAXIMUM RATINGS:  
A
CBR1-  
D020S  
CBR1-  
D040S  
CBR1-  
D060S  
CBR1- CBR1-  
D080S D100S  
(T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
RMS Reve  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
1.0  
50  
800  
800  
560  
1000  
1000  
700  
V
V
RRM  
V
R
V
V
R(RMS)  
Average Forward Current (T =50°C)  
A
Peak Forward Surge Current  
I
A
O
I
A
A2s  
FSM  
I2t  
Rating for Fusing (t<8.35ms)  
10  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
µA  
I
I
V =Rated V  
10  
0.5  
1.1  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
mA  
V
R
R
A
V
I =1.0A  
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
R3 (4-January 2010)  

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