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CAT24C44VE-GTE13 PDF预览

CAT24C44VE-GTE13

更新时间: 2024-11-30 14:09:35
品牌 Logo 应用领域
CATALYST 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 88K
描述
Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, GREEN, SOIC-8

CAT24C44VE-GTE13 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP,
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.16最长访问时间:375 ns
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:256 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:16
功能数量:1端子数量:8
字数:16 words字数代码:16
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:16X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
Base Number Matches:1

CAT24C44VE-GTE13 数据手册

 浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第2页浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第3页浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第4页浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第5页浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第6页浏览型号CAT24C44VE-GTE13的Datasheet PDF文件第7页 
CAT24C44  
256-Bit Serial Nonvolatile CMOS Static RAM  
FEATURES  
Single 5V Supply  
JEDEC Standard Pinouts:  
–8-pin DIP  
Infinite EEPROM to RAM Recall  
CMOS and TTL Compatible I/O  
–8-pin SOIC  
100,000 Program/Erase Cycles (EEPROM)  
Auto Recall on Power-up  
Low CMOS Power Consumption:  
–Active: 3 mA Max.  
–Standby: 30 µA Max.  
Commercial, Industrial and Automotive  
Temperature Ranges  
Power Up/Down Protection  
10 Year Data Retention  
"Green" Package Options Available  
DESCRIPTION  
store protection circuitry prohibits STORE operations  
when VCC is less than 3.5V (typical) ensuring EEPROM  
data integrity.  
The CAT24C44 Serial NVRAM is a 256-bit nonvolatile  
memory organized as 16 words x 16 bits. The high  
speed Static RAM array is bit for bit backed up by a  
nonvolatile EEPROM array which allows for easy trans-  
fer of data from RAM array to EEPROM (STORE) and  
from EEPROM to RAM (RECALL). STORE operations  
are completed in 10ms max. and RECALL operations  
typically within 1.5µs. The CAT24C44 features unlim-  
ited RAM write operations either through external RAM  
writes or internal recalls from EEPROM. Internal false  
The CAT24C44 is manufactured using Catalyst’s ad-  
vancedCMOSfloatinggatetechnology.Itisdesignedto  
endure 100,000 program/erase cycles (EEPROM) and  
has a data retention of 10 years. The device is available  
in JEDEC approved 8-pin plastic DIP and SOIC pack-  
ages.  
PIN CONFIGURATION  
PIN FUNCTIONS  
Pin Name  
SK  
Function  
Serial Clock  
Serial Input  
Serial Data Output  
Chip Enable  
Recall  
DIP Package (P, L, GL)  
SOIC Package (S, V, GV)  
DI  
1
2
3
4
8
7
6
5
CE  
SK  
DI  
1
2
3
4
8
7
6
5
V
CE  
V
CC  
STORE  
CC  
STORE SK  
RECALL DI  
DO  
RECALL  
CE  
DO  
V
DO  
V
SS  
SS  
RECALL  
STORE  
VCC  
Store  
+5V  
VSS  
Ground  
© Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc. No. 1083, Rev. R  
1

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