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C505RT290-S0200 PDF预览

C505RT290-S0200

更新时间: 2024-01-21 00:35:26
品牌 Logo 应用领域
MARKTECH 光电
页数 文件大小 规格书
4页 229K
描述
RazerThin LEDs

C505RT290-S0200 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.40.20.00风险等级:5.77
颜色:GREEN颜色@波长:Blue-Green
配置:SINGLE最大正向电流:0.03 A
最大正向电压:3.7 V安装特点:SURFACE MOUNT
功能数量:1端子数量:2
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:SINGLE COLOR LED包装方法:BULK
最大反向电压:5 V形状:SQUARE
子类别:Visible LEDs表面贴装:YES
Base Number Matches:1

C505RT290-S0200 数据手册

 浏览型号C505RT290-S0200的Datasheet PDF文件第2页浏览型号C505RT290-S0200的Datasheet PDF文件第3页浏览型号C505RT290-S0200的Datasheet PDF文件第4页 
®
RazerThin LEDs  
CxxxRT290-S0200  
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green  
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward  
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs  
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.  
FEATURES  
APPLICATIONS  
Thin 95 μm Chip  
Reduced Forward Voltage  
3.2 V Typical at 20 mA  
RazerThin LED Performance  
Mobile Phone Key Pads  
White LEDs  
Blue LEDs  
Green LEDs  
460nm - 3.8-11.1 mW  
470nm - 3.4-10.4 mW  
505nm - 2.0-6.5 mW  
527nm - 1.7-6.0 mW  
Cellular Phone LCD Backlighting  
Digital Camera Flash For Mobile Appliances  
Automotive Dashboard Lighting  
LED Video Displays  
Single Wire Bond Structure  
Class 2 ESD Rating  
Audio Product Display Lighting  
CxxxRT290-S0200 Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
270 x 270 μm  
InGaN  
Anode (+)  
Mesa (junction)  
246 x 246 μm  
SiC Substrate  
h = 95 μm  
Backside  
Metallization  
Gold Bond Pad  
110 μm Diameter  
Cathode (-)  
Subject to change without notice.  
www.cree.com  

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