Datasheet > C505XT290-0101-A

C505XT290-0101-A

更新时间： 2024-09-24 12:48:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	284K
描述
XThin LEDs

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C505XT290-0101-A 数据手册

XThin LEDs

CxxxXT290-Sxx00-A

Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efﬁcient InGaN materials

with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED

chips have a geometrically enhanced Epi-down design to maximize light extraction efﬁciency and require only a

single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and

require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical speciﬁcations and

the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use

in their LCD backlights and digital camera ﬂash where brightness, sub-miniaturization, and low power consumption

are required.

FEATURES

APPLICATIONS

•

XThin LED Performance

•

Cellular Phone LCD Backlighting

Digital Camera Flash for Mobile Appliance

Mobile Phone Key Pads



460 & 470 nm

–

XT-12™ – 12.0 mW min.

XT-16™ – 16.0 mW min.

XT-18™ – 18.0 mW min.

XT-21™ – 21.0 mW min.

XT-24™ – 24.0 mW min.

–

White LEDs

Blue LEDs

Green LEDs

•

Automotive Dashboard Lighting

LED Video Displays

Audio Product Display Lighting

Trafﬁc Signals



505nm – 8.5 mW min.

527nm – 7.0 mW min.

•

Thin 115 µm Chip

Low Forward Voltage - 3.2 Typical at 20 mA

Single Wire Bond Structure

Class 2 ESD Rating

CxxxXT290-Sxx00-A Chip Diagram

Top View

Bottom View

Die Cross Section

G•SiC LED Chip

300 x 300 μm

Backside

Metalization

Gold Bond Pad

105 μm Diameter

Cathode (-)

Anode (+)

SiC Substrate

t = 115µm

Subject to change without notice.

www.cree.com

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