Datasheet > C505UT230-0104

C505UT230-0104

更新时间： 2024-09-24 12:55:47

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
4页	269K
描述
UltraThin LEDs

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C505UT230-0104 数据手册

UltraThin™ LEDs

CxxxUT230-S0002

Cree’s UltraThin LEDs combine highly efﬁcient InGaN materials with Cree’s proprietary G•SiC^®substrate to deliver

superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and

require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical speciﬁcations

and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and

thinner form factors are required.

FEATURES

APPLICATIONS

•

Small Chip – 230 x 230 x 85 μm

UT LED Performance

•

Mobile Phone Keypads

Audio Product Display Lighting

Mobile Appliance Keypads

Automotive Applications

–

5.5 mW min. (455–475 nm) Blue

2.5 mW min. (500-510 nm) Trafﬁc Green

2.5 mW min. (520-535 nm) Green

•

Low Forward Voltage

2.9–3.0 V Typical at 5 mA

–

•

Single Wire Bond Structure

Class 2 ESD Rating

CxxxUT230-S0002 Chip Diagram

Top View

Bottom View

Die Cross Section

SiC Substrate

Bottom Surface

150 x 150 μm

G•SiC LED Chip

230 x 230 μm

InGaN

Anode (+)

Mesa (junction)

176 x 176 μm

SiC Substrate

h = 85 μm

Gold Bond Pad

105 μm Diameter

Backside

Metallization

80 x 80 μm

Cathode (-)

Subject to change without notice.

www.cree.com

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