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C505UB290-S0101 PDF预览

C505UB290-S0101

更新时间: 2023-02-26 13:57:03
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科锐 - CREE /
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Visible LED

C505UB290-S0101 数据手册

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®
G SiC Technology  
UltraBright™ LEDs  
CXXX-UB29X-S0100  
®
The Leader in Silicon Carbide Solid State Technology  
Features  
Applications  
UltraBright™ Performance  
LED Video Displays  
– 3.8mW min (460nm) Deep Blue  
– 3.4mW min (470nm) Blue  
White LEDs  
– 2.5mW min (505nm) Signal Green  
– 1.7mW min (527nm) Green  
Automotive Dashboard Lighting  
Cellular Phone Backlighting  
Audio Product Display Lighting  
Sorted to Wavelength and Power Bins  
Single Wire Bond Structure  
Class II ESD Rating  
Description  
Cree's UB™ series of UltraBright™ LEDs combine highly efficient InGaN materials with Cree's  
proprietary SiC® substrate to deliver excellent price performance for high intensity blue and green LEDs.  
UltraBright LED chips are available in a geometrically enhanced vertical structure or a straight-wall  
design for use in reflector-less applications such as ChipLEDs. Both require only a single wire bond  
connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant flux bins.  
Cree's UB series chips are individually tested for conformity to optical and electrical specifications and  
the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as  
outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also be  
used in high volume applications such as LCD backlighting. Cree's CB series chips are compatible with  
most radial and SMT LED assembly processes.  
CXXX-UB29X-S0100 Chip Diagram  
Die Cross Section (UB290)  
Straight-wall design (UB291)  
Topside View  
G·SiC ® LED Chip  
300 x 300 µm  
Anode (+)  
h = 250 µm  
Cathode (-)  
InGaN  
InGaN  
Mesa (junction)  
240 x 240 µm  
SiC Substrate  
SiC Substrate  
Backside  
Metallization  
Gold Bond Pad  
114 µm Diameter  
CPR3AG Rev. E  
© 2000-2003 Cree, Inc. All Rights Reserved.  

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