Datasheet > C505UB291-S0100

C505UB291-S0100

更新时间： 2024-09-24 19:43:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
5页	186K
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C505UB291-S0100 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.77	Base Number Matches：	1

C505UB291-S0100 数据手册

•

G SiC Technology

UltraBright™ LEDs

CxxxUB29x-S0100

Features

Applications

• UltraBright™ LED Performance

• LED Video Displays

– 3.8mW min (460nm) Deep Blue

– 3.4mW min (470nm) Blue

• White LEDs

– 2.5mW min (505nm) Signal Green

– 1.7mW min (527nm) Green

• Automotive Dashboard Lighting

• Cellular Phone Backlighting

• Audio Product Display Lighting

• Sorted to Wavelength and Power Bins

• Single Wire Bond Structure

• Class II ESD Rating

Description

Cree's UB™ series of UltraBright™ LEDs combine highly efficient InGaN materials with Cree's

proprietary G⋅SiC substrate to deliver excellent price performance for high intensity blue and green

LEDs. UltraBright LED chips are available in a geometrically enhanced vertical structure or a straight-

wall design for use in reflector-less applications such as ChipLEDs. Both require only a single wire

bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant

flux bins. Cree's UB series chips are tested for conformity to optical and electrical specifications and

the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as

outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also

be used in high volume applications such as LCD backlighting. Cree's UB series chips are compatible

with most radial and SMT LED assembly processes.

CxxxUB29x-S0100 Chip Diagram

Die Cross Section (UB290)

Straight-wall design (UB291)

Topside View

G·SiC ® LED Chip

300 x 300 µm (UB290)

Anode (+)

h = 250 µm

Cathode (-)

275 x 275 m (UB291)

InGaN

Mesa (junction)

240 x 240 µm

SiC Substrate

Backside

Metallization

Gold Bond Pad

114 µm Diameter

CPR3AG Rev. H

12 3 4 5

中文翻译

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