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C505XB900-S6000-A PDF预览

C505XB900-S6000-A

更新时间: 2024-01-10 13:37:45
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
4页 253K
描述
XBright㈢ Power Chip LED

C505XB900-S6000-A 数据手册

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®
XBright Power Chip LED  
CxxxXB900-Sx000-A  
Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient  
InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity  
LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and  
require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor  
full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical  
power packages that employ proper thermal management.  
FEATURES  
APPLICATIONS  
XBright LED Technology  
General Illumination  
Larger “Power Chip” Design  
High Performance  
Automobile  
Aircraft  
90 mW min. (460 & 470 nm) Blue  
60 mW min. (505 nm) Traffic Green  
40 mW min. (527 nm) Green  
Decorative Lighting  
Task Lighting  
Outdoor Illumination  
Single Wire Bond Structure  
AuSn Backside Metalization  
White LEDs  
Backlighting  
Traffic Signals  
CxxxXB900-Sx000-A Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
900 x 900 μm  
764 μm  
Contact Metal  
Cathode (-)  
Width = 30 μm  
SiC Substrate  
h = 250 μm  
Bond Pad  
120 μm Diameter  
InGaN  
Anode (+)  
Subject to change without notice.  
www.cree.com  

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