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C25G-LF PDF预览

C25G-LF

更新时间: 2024-09-18 18:52:19
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
2页 39K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 400V V(RRM), Silicon,

C25G-LF 数据手册

 浏览型号C25G-LF的Datasheet PDF文件第2页 
WTE  
POWER SEMICONDUCTORS  
C25A – C25K  
25A AUTOMOTIVE CELL DIODE  
Features  
Diffused Junction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Die Size 164 mil HEX  
D
Anode +  
C
E
Mechanical Data  
B
C25  
Dim  
A
Min  
Max  
5.70  
4.82  
Case: Cell Diode Passivated with Silicon Rubber  
Terminal: Copper Disc with Ag Plated  
Polarity: Indicated by Large Disc On Cathode  
Side, Add “R” Suffix to Indicate Reverse Polarity,  
i.e. C25AR  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
B
C
0.75  
1.0  
D
E
2.2  
A
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
C25A  
50  
C25B  
100  
70  
C25D  
200  
C25G  
400  
C25J  
600  
C25K  
800  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
140  
280  
420  
560  
V
A
Average Rectified Output Current  
@TC = 150°C  
25  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
400  
A
Forward Voltage  
@IF = 50A  
VFM  
IRM  
1.08  
3.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
µA  
@TA = 25°C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
RθJA  
1.8  
°C/W  
°C  
TJ, TSTG  
-40 to +150  
C25A – C25K  
1 of 2  
© 2006 Won-Top Electronics  

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