Datasheet > C25KR

C25KR

更新时间： 2024-11-07 18:52:19

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	39K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 800V V(RRM), Silicon,

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C25KR 数据手册

WTE

POWER SEMICONDUCTORS

C25A – C25K

25A AUTOMOTIVE CELL DIODE

Features



Diffused Junction



Low Leakage

Low Cost

High Surge Current Capability

Die Size 164 mil HEX

Anode +

Mechanical Data

C25

Dim

Min

—

Max

5.70

4.82

—



Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C25AR

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

—

0.75

1.0

—

2.2



All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C25A

C25B

100

C25D

200

C25G

400

C25J

600

C25K

800

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

140

280

420

560

Average Rectified Output Current

@T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

400

Forward Voltage

@I_F= 50A

VFM

IRM

1.08

3.0

Peak Reverse Current

At Rated DC Blocking Voltage

µA

@T_A= 25°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

RθJA

1.8

°C/W

°C

TJ, TSTG

-40 to +150

C25A – C25K

1 of 2

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C25P02QL	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 20V V(RRM), Silicon, SIMILAR TO TO-247
C25P03Q	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 25A, 30V V(RRM), Silicon, SIMILAR TO TO-247
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C25P05Q	ETC	获取价格	SCHOTTKY BARRIER DIODE
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