WTE
POWER SEMICONDUCTORS
Pb
C25A – C25K
25A AUTOMOTIVE CELL DIODE
Features
!
Diffused Junction
!
!
!
!
Low Leakage
Low Cost
High Surge Current Capability
Die Size 164 mil HEX
D
Anode +
C
E
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Mechanical Data
B
C25
Min
—
Dim
A
Max
5.46
4.82
—
!
!
!
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode
Side, Add “R” Suffix to Indicate Reverse Polarity,
i.e. C25AR
B
—
C
0.75
1.0
—
D
—
E
2.2
!
!
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
A
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
C25A
50
C25B
100
70
C25D
200
C25G
400
C25J
600
C25K
800
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
RMS Reverse Voltage
VR(RMS)
IO
35
140
280
420
560
V
A
Average Rectified Output Current
@TC = 150°C
25
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
400
A
Forward Voltage
@IF = 50A
VFM
1.08
3.0
V
Peak Reverse Current
At Rated DC Blocking Voltage
IRM
µA
@TA = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
RꢀJA
1.8
°C/W
°C
TJ, TSTG
-40 to +150
C25A – C25K
1 of 2
© 2006 Won-Top Electronics