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BZT03-C75 PDF预览

BZT03-C75

更新时间: 2024-09-16 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器稳压二极管测试
页数 文件大小 规格书
9页 50K
描述
Voltage regulator diodes

BZT03-C75 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:E-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.88
Is Samacsys:N最小击穿电压:70 V
外壳连接:ISOLATED最大钳位电压:103.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE最大动态阻抗:100 Ω
JESD-30 代码:E-LALF-W2湿度敏感等级:1
最大非重复峰值反向功率耗散:300 W元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):225
极性:UNIDIRECTIONAL最大功率耗散:1.3 W
认证状态:Not Qualified标称参考电压:75 V
最大反向电流:5 µA子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.5%
工作测试电流:10 mABase Number Matches:1

BZT03-C75 数据手册

 浏览型号BZT03-C75的Datasheet PDF文件第1页浏览型号BZT03-C75的Datasheet PDF文件第3页浏览型号BZT03-C75的Datasheet PDF文件第4页浏览型号BZT03-C75的Datasheet PDF文件第5页浏览型号BZT03-C75的Datasheet PDF文件第6页浏览型号BZT03-C75的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZT03 series  
construction. This package is  
FEATURES  
DESCRIPTION  
hermetically sealed and fatigue free  
as coefficients of expansion of all  
used parts are matched.  
Glass passivated  
Rugged glass SOD57 package, using  
a high temperature alloyed  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
k
a
Zener working voltage range:  
7.5 to 270 V for 38 types  
MAM204  
Transient suppressor stand-off  
voltage range:  
6.2 to 430 V for 45 types  
Fig.1 Simplified outline (SOD57) and symbol.  
Available in ammo-pack.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
3.25  
1.30  
UNIT  
Ptot  
total power dissipation  
Ttp = 25 °C; lead length 10 mm; see Fig.2  
W
T
amb = 45 °C; see Fig.2;  
PCB mounted (see Fig.6)  
W
W
W
W
PZRM  
PZSM  
PRSM  
repetitive peak reverse power  
dissipation  
10  
600  
300  
non-repetitive peak reverse  
power dissipation  
tp = 100 µs; square pulse;  
Tj = 25 °C prior to surge; see Fig.3  
non-repetitive peak reverse  
power dissipation  
10/1000 µs exponential pulse (see Fig.4);  
Tj = 25 °C prior to surge  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175 °C  
+175 °C  
1996 Jun 11  
2

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