BZD27C110P

更新时间： 2024-11-03 21:54:23

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管测试
页数	文件大小	规格书
7页	239K
描述
Zener Diodes with Surge Current Specification

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中文翻译

获取价格

数据手册

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BZD27C110P 数据手册

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features

• Sillicon Planar Zener Diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

17249

• Excellent stability

• High temperature soldering:

260 °C/10 sec. at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Packaging codes/options:

GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box

GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box

Mechanical Data

Case: JEDEC DO-219AB (SMF ) Plastic case

Weight: approx. 15 mg

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Power dissipation

Test condition

T_L= 80 °C

_A= 25 °C

Symbol

P_tot

Value

2.3

Unit

0.8¹⁾

300

P_tot

100 µs square pulse²⁾

Non-repetitive peak pulse power

dissipation

P_ZSM

10/1000 µs waveform (BZD27-

C7V5P to BZD27-C100P)²⁾

10/1000 µs waveform (BZD27-

C110P to BZD27-C200P)²⁾

P_RSM

150

100

¹⁾Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

²⁾T_J= 25 °C prior to surge

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

R_thJA

Value

180

Unit

K/W

Thermal resistance junction to ambient air¹⁾

Thermal resistance junction to lead

R_thJL

T_j

150

K/W

°C

Maximum junction temperature

Storage temperature range

T_S

- 55 to + 150

°C

¹⁾Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Forward voltage

Test condition

I_F= 0.2 A

Symbol

V_F

Min

Typ.

Max

1.2

Unit

Document Number 85810

Rev. 1.8, 13-Apr-05

www.vishay.com

12 3 4 5 6 7

中文翻译

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