BZD27C110P-M

更新时间： 2024-11-04 09:03:51

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
7页	112K
描述
Zener Diodes with Surge Current Specification

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中文翻译

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数据手册

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BZD27C110P-M 数据手册

BZD27C3V6P-M to BZD27C200P-M

www.vishay.com

Vishay Semiconductors

Zener Diodes with Surge Current Specification

FEATURES

• Sillicon planar Zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s at

terminals

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

• Halogen-free according to IEC 61249-2-21 definition

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

3.6 to 200

5 to 100

UNIT

Pulse current

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZD27C3V6P-M to

BZD27C200P-M

BZD27C3V6P-M to

BZD27C200P-M-series-08

3000 per 7" reel (8mm tape)

15 000/box

BZD27C3V6P-M to

BZD27C200P-M

BZD27C3V6P-M to

BZD27C200P-M-series-18

10 000 per 13" reel (8 mm tape)

10 000/box

PACKAGE

MOLDING COMPOUND MOISTURE SENSITIVITY

SOLDERING

CONDITIONS

PACKAGE NAME

WEIGHT

15 mg

FLAMMABILITY RATING

LEVEL

MSL level 1

DO-219AB (SMF)

UL 94 V-0

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

T_L= 80 °C

SYMBOL

P_tot

VALUE

UNIT

2300

800

Power dissipation

T_A= 25 °C ⁽¹⁾

P_tot

100 μs square pulse

P_ZSM

300

10/1000 μs waveform

(BZD27-C7V5P-M to BZD27-C100P-M)

10/1000 μs waveform

Non repetitive peak surge power

dissipation ⁽²⁾

P_RSM

150

P_RSM

R_thJL

100

(BZD27-C110P-M to BZD27-C200P-M)

Junction to lead

K/W

Mounted on epoxy-glass PCB with 3 mm x

Junction to ambient air

R_thJA

180

K/W

3 mm Cu pads ( 40 μm thick)

Junction temperature

T_j

150

°C

Storage temperature range

T_stg

- 55 to + 150

Notes

(1)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)

T_J= 25 °C prior to surge

(2)

Rev. 1.2, 29-Nov-11

Document Number: 83307

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

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与BZD27C110P-M相关器件

型号	品牌	获取价格	描述	数据表
BZD27C110P-M08	VISHAY	获取价格	DIODE 110 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FRE
BZD27C110P-M-08	VISHAY	获取价格	DIODE 110 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FRE
BZD27C110P-M18	VISHAY	获取价格	DIODE 110 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FRE
BZD27C110P-M-18	VISHAY	获取价格	DIODE 110 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FRE
BZD27C110P-M3-18	VISHAY	获取价格	Zener Diode, 110V V(Z), 5%, 2.3W,
BZD27C110P-TP	MCC	获取价格	暂无描述
BZD27C110PV	RECTRON	获取价格	Package / Case : SOD-123F(L)-1;Mounting Style : SMT/SMD;Zener Voltage Vz (V) : 110 V;Zener
BZD27C110T/R	PHILIPS	获取价格	Zener Diode, 110V V(Z), 5%, 2.3W,
BZD27C110TRL	YAGEO	获取价格	Zener Diode, 110V V(Z), 2.3W, Silicon, Unidirectional
BZD27-C11A	EIC	获取价格	VOLTAGE REGULATOR DIODES

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