BZD27C110P-M08

更新时间： 2024-11-05 04:15:03

品牌	Logo	应用领域
威世 - VISHAY		稳压二极管
页数	文件大小	规格书
7页	85K
描述
DIODE 110 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode

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中文翻译

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数据手册

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BZD27C110P-M08 数据手册

BZD27C3V6P-M to BZD27C200P-M

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features

• Sillicon planar zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s

at terminals

17249

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21

definition

Mechanical Data

Case: DO-219AB (SMF)

Weight: approx. 15 mg

Packaging codes/options:

18/10 k per 13 " reel (8 mm tape), 10 k/box

08/3 k per 7 " reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

T_L= 80 °C

Symbol

P_tot

Value

2.3

Unit

Power dissipation

0.8 ¹⁾

300

T_A= 25 °C

P_tot

100 μs square pulse ²⁾

10/1000 μs waveform (BZD27-C7V5P-M to BZD27-C100P-M) ²⁾

10/1000 μs waveform (BZD27-C110P-M to BZD27-C200P-M) ²⁾

P_ZSM

P_RSM

Non-repetitive peak pulse power

dissipation

150

100

Note:

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

²⁾T_J= 25 °C prior to surge

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

R_thJA

Value

Unit

K/W

Thermal resistance junction to ambient air ¹⁾

Thermal resistance junction to lead

180

R_thJL

T_j

K/W

°C

Maximum junction temperature

Storage temperature range

Note:

150

T_S

- 55 to + 150

°C

¹⁾Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)

Document Number 83307

Rev. 1.0, 01-Apr-10

www.vishay.com

For technical support, please contact: DiodesSSP@vishay.com

12 3 4 5 6 7

中文翻译

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