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BZD27C110P-HE3-08 PDF预览

BZD27C110P-HE3-08

更新时间: 2024-11-04 22:51:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 116K
描述
DIODE ZENER 800MW SMF DO219

BZD27C110P-HE3-08 数据手册

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BZD27C Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes with Surge Current Specification  
FEATURES  
eSMP® Series  
Available  
• Sillicon planar Zener diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
1
2
• Excellent stability  
23018  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
23019  
SMF (DO-219AB)  
• Meets JESD 201 class 2 whisker test  
• ESD capability according to AEC-Q101:  
human body model: > 8 kV  
machine model: > 800 V  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
• Wave and reflow solderable  
• AEC-Q101 qualified available  
PRIMARY CHARACTERISTICS  
• Base P/N-E3 - RoHS-compliant, and commercial grade  
PARAMETER  
VZ range nom.  
Test current IZT  
VBR  
VWM  
PPPM  
VALUE  
3.6 to 200  
5 to 100  
7 to 188  
6.2 to 160  
150  
UNIT  
Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified  
V
mA  
V
V
W
°C  
• Compatible to SOD-123W package case outline or  
SOD-123F and SOD-123FL  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TJ max.  
175  
VZ specification  
Circuit configuration  
Polarity  
Pulse current  
Single  
Uni-directional  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZD27C3V6P-E3-08 to BZD27C200P-E3-08  
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08  
BZD27C3V6P-E3-18 to BZD27C200P-E3-18  
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18  
3000 per 7" reel (8 mm tape)  
MOQ = 30K  
BZD27C Series  
10 000 per 13" reel (8 mm tape)  
MOQ = 50K  
PACKAGE  
MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST  
PACKAGE NAME WEIGHT  
SOLDERING CONDITIONS  
FLAMMABILITY RATING  
LEVEL  
ACC. JESD 201  
MSL level 1  
(according J-STD-020)  
SMF (DO-219AB)  
15 mg  
UL 94 V-0  
class 2  
Peak temperature max. 260 °C  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
2300  
800  
300  
150  
UNIT  
mW  
mW  
W
W
K/W  
TL = 105 °C  
TA = 30 °C (1)  
Ptot  
Ptot  
Power dissipation  
100 μs square pulse  
10/1000 μs waveform  
PZSM  
PRSM  
RthJL  
Non repetitive peak surge power dissipation (2)  
Junction to lead  
30  
Mounted on epoxy-glass PCB with  
3 mm x 3 mm Cu pads (40 μm thick)  
Junction to ambient air  
RthJA  
180  
K/W  
Junction temperature  
Storage temperature range  
Operating temperature range  
Tj  
Tstg  
Top  
175  
-65 to +175  
-65 to +175  
°C  
°C  
°C  
Notes  
(1)  
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 μm thick)  
TJ = 25 °C prior to surge  
(2)  
Rev. 2.0, 26-Feb-2021  
Document Number: 85153  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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