Datasheet > BYV32-200-HE3/45

BYV32-200-HE3/45

更新时间： 2024-02-10 09:54:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	142K
描述
DIODE 9 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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BYV32-200-HE3/45 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

BYV32-200-HE3/45 数据手册

BYV(F,B)32-50 thru BYV(F,B)32-200

Vishay General Semiconductor

Dual Common-Cathode Ultrafast Rectifier

FEATURES

TO-220AB

ITO-220AB

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

BYV32 Series

BYVF32 Series

PIN 1

PIN 2

CASE

PIN 1

PIN 2

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

PIN 3

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

BYVB32 Series

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

18 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_RRM

I_FSM

t_rr

50 V to 200 V

150 A

25 ns

V_F

0.85 V

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 125 °C

100

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

T_J, T_STG

V_AC

150

°C

Operating storage and temperature range

- 65 to + 150

1500

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Document Number: 88558

Revision: 05-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与BYV32-200-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
BYV32-200M	SEME-LAB	获取价格	HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
BYV32-200N	VISHAY	获取价格	Rectifier Diode, 18A, 200V V(RRM),
BYV32-200SMD	SEME-LAB	获取价格	DUAL FAST RECOVERY RECTIFIER DIODE
BYV32-200SMDCECC	ETC	获取价格	Dual Fast Recovery common cathode Rectifier
BYV32-200XM	ETC	获取价格	Dual Fast Recovery common cathode Rectifier
BYV32-200-XM	SEME-LAB	获取价格	HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
BYV32-200-XTM	SEME-LAB	获取价格	HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
BYV32-50	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
BYV32-50D	VISHAY	获取价格	Rectifier Diode, 16A, 50V V(RRM),
BYV32-50-E3/45	VISHAY	获取价格	DIODE 9 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re

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