Datasheet > BYV133X-40

BYV133X-40

更新时间： 2024-11-22 03:10:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
6页	38K
描述
20A, 40V, SILICON, RECTIFIER DIODE

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BYV133X-40 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

BYV133F, BYV133X series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Isolated package

V_R= 35 V/ 40 V/ 45 V

I_O(AV)= 20 A

V_F≤ 0.6 V

GENERAL DESCRIPTION

Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended

for use as output rectifiers in low voltage, high frequency switched mode power supplies.

The BYV133F series is supplied in the SOT186 package.

The BYV133X series is supplied in the SOT186A package.

PINNING

SOT186

SOT186A

DESCRIPTION

anode 1 (a)

cathode (k)

case

anode 2 (a)

isolated

2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYV133F-

BYV133X-

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_hs≤ 99 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5;

T_hs≤ 57 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5;

T_hs≤ 57 ˚C

Non-repetitive peak forward t = 10 ms

100

110

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

May 1998

Rev 1.100

12 3 4 5 6

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