BYV143

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	35K
描述
Rectifier diodes schottky barrier

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BYV143 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

BYV143F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual, low leakage, platinum barrier,

schottky rectifier diodes in a full pack

plastic envelope, featuring low

forward voltage drop, absence of

stored charge. and guaranteed

reverse surgecapability. The devices

areintendedforuseinswitchedmode

power supplies and high frequency

circuits in general where low

conductionand zero switchinglosses

are important.

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

BYV143F-

V_RRM

Repetitive peak reverse

voltage

V_F

I_O(AV)

Forward voltage

0.62

Average output current

(both diodes conducting)

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode 1 (a)

case

cathode (k)

anode 2 (a)

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

MAX.

UNIT

-35

-40

-45

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_hs≤ 112 ˚C

I_O(AV)

I_O(RMS)

I_FRM

Average output current (both

diodes conducting)

square wave; δ = 0.5;

_hs≤ 87 ˚C

RMS output current (both

diodes conducting)

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

T_hs≤ 87 ˚C

I_FSM

Non-repetitive peak forward

current, per diode

t = 10 ms

100

110

t = 8.3 ms

sinusoidal T_j= 125 ˚C prior

to surge; with reapplied

V_RRM(max)

I²t

I²t for fusing

t = 10 ms

A²s

I_RRM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

per diode.

I_RSM

Non-repetitive peak reverse

current per diode.

t_p= 100 µs

T_stg

T_j

Storage temperature

-65

175

150

˚C

Operating junction temperature

August 1996

Rev 1.100

12 3 4 5

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与BYV143相关器件

型号	品牌	获取价格	描述	数据表
BYV143-35	NXP	获取价格	30A, 35V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, TO-220AB, 3 PIN
BYV143-40	NXP	获取价格	30A, 40V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, TO-220AB, 3 PIN
BYV143-40AM	SEME-LAB	获取价格	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
BYV143-40M	SEME-LAB	获取价格	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
BYV143-40MA	SEME-LAB	获取价格	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
BYV143-40RM	SEME-LAB	获取价格	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
BYV143-45	NXP	获取价格	30A, 45V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, TO-220AB, 3 PIN
BYV143-45	YAGEO	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon,
BYV143-45AM	SEME-LAB	获取价格	DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
BYV143-45M	SEME-LAB	获取价格	Dual Schottky common cathode Rectifier