BYV143F-45

更新时间： 2024-11-24 22:15:15

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	35K
描述
Rectifier diodes schottky barrier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BYV143F-45 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

schottky barrier

BYV143F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual, low leakage, platinum barrier,

schottky rectifier diodes in a full pack

plastic envelope, featuring low

forward voltage drop, absence of

stored charge. and guaranteed

reverse surgecapability. The devices

areintendedforuseinswitchedmode

power supplies and high frequency

circuits in general where low

conductionand zero switchinglosses

are important.

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

BYV143F-

V_RRM

Repetitive peak reverse

voltage

V_F

I_O(AV)

Forward voltage

0.62

Average output current

(both diodes conducting)

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

DESCRIPTION

anode 1 (a)

case

cathode (k)

anode 2 (a)

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

MAX.

UNIT

-35

-40

-45

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_hs≤ 112 ˚C

I_O(AV)

I_O(RMS)

I_FRM

Average output current (both

diodes conducting)

square wave; δ = 0.5;

_hs≤ 87 ˚C

RMS output current (both

diodes conducting)

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

T_hs≤ 87 ˚C

I_FSM

Non-repetitive peak forward

current, per diode

t = 10 ms

100

110

t = 8.3 ms

sinusoidal T_j= 125 ˚C prior

to surge; with reapplied

V_RRM(max)

I²t

I²t for fusing

t = 10 ms

A²s

I_RRM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

per diode.

I_RSM

Non-repetitive peak reverse

current per diode.

t_p= 100 µs

T_stg

T_j

Storage temperature

-65

175

150

˚C

Operating junction temperature

August 1996

Rev 1.100

12 3 4 5

中文翻译

下载PDF

与BYV143F-45相关器件

型号	品牌	获取价格	描述	数据表
BYV14-TAP	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, HALOGEN FREE A
BYV14-TR	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, HALOGEN FREE A
BYV15	VISHAY	获取价格	Fast Silicon Mesa Rectifiers
BYV15	BL Galaxy Electrical	获取价格	FAST RECOVERY RECTIFIER
BYV15	TEMIC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon,
BYV-150	MICROSEMI	获取价格	RECTIFIERS
BYV15M-650P	WEEN	获取价格	Ultrafast power diode in a 2-lead TO220 plastic package.
BYV15MB-650P	WEEN	获取价格	Ultrafast power diode in a TO263 plastic package
BYV15MD-650P	WEEN	获取价格	Ultrafast power diode in a TO252 (DPAK) plastic package.
BYV15MX-650P	WEEN	获取价格	Hyperfast power diode in 2-lead TO220F plastic package.