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BYV16-TAP

更新时间: 2024-11-25 12:53:19
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 130K
描述
Fast Avalanche Sinterglass Diode

BYV16-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.71
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V最大反向恢复时间:0.3 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYV16-TAP 数据手册

 浏览型号BYV16-TAP的Datasheet PDF文件第2页浏览型号BYV16-TAP的Datasheet PDF文件第3页浏览型号BYV16-TAP的Datasheet PDF文件第4页浏览型号BYV16-TAP的Datasheet PDF文件第5页 
BYV12, BYV13, BYV14, BYV15, BYV16  
www.vishay.com  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949539  
APPLICATIONS  
• Fast rectification and switching diode for example for  
TV-line output circuits and switch mode power supply  
MECHANICAL DATA  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYV16  
BYV16-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYV16  
BYV16-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
VR = 100 V; IF(AV) = 1.5 A  
VR = 400 V; IF(AV) = 1.5 A  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYV12  
BYV13  
BYV14  
BYV15  
BYV16  
V
R = 600 V; IF(AV) = 1.5 A  
R = 800 V; IF(AV) = 1.5 A  
V
VR = 1000 V; IF(AV) = 1.5 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BYV12  
BYV13  
BYV14  
BYV15  
BYV16  
SYMBOL  
VR = VRRM  
VALUE  
UNIT  
V
100  
V
V
R = VRRM  
R = VRRM  
400  
V
Reverse voltage = repetitive peak reverse  
voltage  
See electrical characteristics  
600  
V
VR = VRRM  
R = VRRM  
IFSM  
800  
V
V
1000  
V
Peak forward surge current  
tp = 10 ms, half sine wave  
40  
A
Repetitive peak forward current  
Average forward current  
IFRM  
9
A
= 180°  
(BR)R = 0.4 A  
IF(AV)  
ER  
Tj = Tstg  
1.5  
10  
A
Non repetitive reverse avalanche energy  
Junction and storage temperature range  
I
mJ  
°C  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
45  
K/W  
K/W  
Junction ambient  
RthJA  
100  
Rev. 1.8, 04-Sep-12  
Document Number: 86039  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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