Datasheet > BYV21MX-650P

BYV21MX-650P

更新时间： 2024-11-26 17:00:47

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	410K
描述
Ultrafast power diode in a TO220F-2L plastic package.

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BYV21MX-650P 数据手册

BYV21MX-650P

Ultrafast power diode

Rev.01 - 23 December 2022

Product data sheet

1. General description

Ultrafast power diode in a TO220F-2L plastic package.

2. Features and beneﬁts

•

Fast switching

•

Isolated plastic package

Low leakage current

Low reverse recovery current

Low thermal resistance

Reduces switching losses in associated MOSFET or IGBT

3. Applications

•

Active PFC in air conditioner

High frequency switched-mode power supplies

Power Factor Correction (PFC)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

650

average forward current δ = 0.5 ; square-wave pulse;

Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5 ; t_p= 25 μs; square-wave pulse

current

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

180

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

198

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

forward voltage

I_F= 20 A; T_j= 25 °C; Fig. 6

I_F= 20 A; T_j= 150 °C; Fig. 6

1.90

1.50

2.60

2.20

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

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