5秒后页面跳转
BYV13 PDF预览

BYV13

更新时间: 2024-11-20 22:50:23
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
4页 51K
描述
Fast Silicon Mesa Rectifiers

BYV13 技术参数

是否无铅:不含铅生命周期:Obsolete
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
Is Samacsys:N应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最大输出电流:1.5 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.3 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYV13 数据手册

 浏览型号BYV13的Datasheet PDF文件第2页浏览型号BYV13的Datasheet PDF文件第3页浏览型号BYV13的Datasheet PDF文件第4页 
BYV12...BYV16  
Vishay Telefunken  
Fast Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Soft recovery characteristic  
Low reverse current  
Applications  
94 9539  
Fast rectifier and switch for example for TV–line output  
circuits and switch mode power supply  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
100  
400  
600  
800  
1000  
40  
Unit  
V
V
V
V
BYV12  
BYV13  
BYV14  
BYV15  
BYV16  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
V =V  
R
V
A
Peak forward surge current  
t =10ms,  
I
p
FSM  
half sinewave  
Repetitive peak forward current  
Average forward current  
Junction and storage  
temperature range  
I
I
9
1.5  
–65...+175  
A
A
C
FRM  
ϕ=180 , T =25 C  
amb  
FAV  
T =T  
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=10mm, T =constant  
on PC board with spacing 25mm  
Symbol  
Value  
45  
100  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =1A  
V
1.5  
5
150  
300  
200  
V
A
A
ns  
nC  
F
F
V =V  
I
I
1
60  
R
RRM  
R
V =V  
, T =150 C  
R
RRM  
j
R
Reverse recovery time  
Reverse recovery charge  
I =0.5A, I =1A, i =0.25A  
t
rr  
Q
F
R
R
I =1A, di/dt=5A/ s  
F
rr  
Document Number 86039  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

与BYV13相关器件

型号 品牌 获取价格 描述 数据表
BYV133 NXP

获取价格

20A, 35V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-35 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon
BYV133-35 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 35V V(RRM),
BYV133-35 NXP

获取价格

20A, 35V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-40 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon
BYV133-40 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 40V V(RRM),
BYV133-40 NXP

获取价格

20A, 40V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-45 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon
BYV133-45 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 45V V(RRM),
BYV133-45 NXP

获取价格

20A, 45V, SILICON, RECTIFIER DIODE, TO-220AB