5秒后页面跳转
BYV13 PDF预览

BYV13

更新时间: 2024-02-17 18:57:10
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 快速恢复二极管
页数 文件大小 规格书
2页 68K
描述
FAST RECOVERY RECTIFIER

BYV13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.45
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:400 V最大反向恢复时间:0.3 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYV13 数据手册

 浏览型号BYV13的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
BYV12(Z)---BYV16(Z)  
BL  
VOLTAGE RANGE: 100 --- 1000 V  
CURRENT: 1.5 A  
FAST RECOVERY RECTIFIER  
FEATURES  
Low cost  
DO - 15  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-15,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces,0.39 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
BYV  
12  
BYV  
13  
BYV  
14  
BYV  
15  
BYV  
16  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
100  
70  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
1.5  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
IFSM  
60.0  
1.3  
A
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.5 A  
V
A
VF  
IR  
Maximumreverse current  
@TA=25  
5.0  
100.0  
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
300  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
18  
pF  
CJ  
45  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55---- +150  
- 55---- +150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
Document Number 0261044  
BLGALAXY ELECTRICAL  
1.  

与BYV13相关器件

型号 品牌 获取价格 描述 数据表
BYV133 NXP

获取价格

20A, 35V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-35 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon
BYV133-35 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 35V V(RRM),
BYV133-35 NXP

获取价格

20A, 35V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-40 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon
BYV133-40 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 40V V(RRM),
BYV133-40 NXP

获取价格

20A, 40V, SILICON, RECTIFIER DIODE, TO-220AB
BYV133-45 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon
BYV133-45 PHILIPS

获取价格

Rectifier Diode, Schottky, 18A, 45V V(RRM),
BYV133-45 NXP

获取价格

20A, 45V, SILICON, RECTIFIER DIODE, TO-220AB