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BUZ72A PDF预览

BUZ72A

更新时间: 2024-02-10 08:20:26
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 197K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ72A 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75Base Number Matches:1

BUZ72A 数据手册

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BUZ 72 A  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 72 A  
100 V  
9 A  
0.25 Ω  
TO-220 AB  
C67078-S1313-A3  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 25 °C  
C
9
Pulsed drain current  
Dpuls  
AR  
T = 25 °C  
C
36  
10  
7.9  
Avalanche current,limited by T  
jmax  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
mJ  
jmax  
AR  
AS  
E
I = 10 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
L = 885 µH, T = 25 °C  
59  
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
40  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
3.1  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
75  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

BUZ72A 替代型号

型号 品牌 替代类型 描述 数据表
BUZ72A STMICROELECTRONICS

功能相似

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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