生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.26 | 雪崩能效等级(Eas): | 59 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 9 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 105 pF |
JESD-30 代码: | R-PSSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
最大脉冲漏极电流 (IDM): | 36 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 130 ns |
最大开启时间(吨): | 85 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ72A-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72A-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72AL | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) | |
BUZ72AL-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72AL-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72AL-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ72L | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) |