Datasheet > BUZ60

BUZ60

更新时间： 2024-11-28 22:16:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	45K
描述
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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BUZ60 数据手册

BUZ60

Semiconductor

Data Sheet

October 1998

File Number 2260.1

5.5A, 400V, 1.000 Ohm, N-Channel Power

MOSFET

Features

• 5.5A, 400V

• r = 1.000Ω

[ /Title

(BUZ60

)

/Sub-

ject

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

(5.5A,

400V,

1.000

Ohm,

N-Chan-

nel

Power

MOS-

FET)

Formerly developmental type TA17414.

• Majority Carrier Device

Ordering Information

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

BUZ60

TO-220AB

NOTE: When ordering, use the entire part number.

Symbol

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Chan-

nel

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

Power

MOS-

FET,

DRAIN (FLANGE)

TO-

220AB)

/Cre-

ator ()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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